کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5186505 | 1381106 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Surface-initiated atom transfer radical polymerization of polyhedral oligomeric silsesquioxane (POSS) methacrylate from flat silicon wafer Surface-initiated atom transfer radical polymerization of polyhedral oligomeric silsesquioxane (POSS) methacrylate from flat silicon wafer](/preview/png/5186505.png)
A polyhedral oligomeric silsesquioxane (POSS) methacrylate monomer, i.e. 3-(3,5,7,9,11,13,15-heptacyclopentyl-pentacyclo [9.5.1.1.3,91.5,1517,13]-octasiloxane-1-yl) propyl methacrylate (POSS-MA), was directly grafted from flat silicon wafers using surface-initiated atom transfer radical polymerization (ATRP). Two methods were used to improve the system livingness and control of polymer molecular weights. By 'adding free initiator' method, a linear relationship between the grafted poly(POSS-MA) layer thickness and monomer conversion was observed. By 'adding deactivator' method, the poly(POSS-MA) thickness increased linearly with reaction time. Poly(POSS-MA) layers up to 40Â nm were obtained. The chemical compositions measured by X-ray photoelectron spectroscopy (XPS) agreed well with their theoretical values. Water contact angle measurements revealed that the grafted poly(POSS-MA) was extremely hydrophobic. The surface morphologies of the grafted polymer layers were studied by an atom force microscopy (AFM).
Journal: Polymer - Volume 47, Issue 4, 8 February 2006, Pages 1119-1123