کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5186872 | 1381115 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the some electrical properties of the non-ideal PPy/p-Si/Al structure
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آلی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electrical analysis of the PPy/p-Si structure has been investigated by means of I-V, C-V and C-f measurements. The diode ideality factor and the barrier height have been obtained to be n=1.78 and Φb=0.69 eV by applying a thermionic emission theory, respectively. At high current densities in the forward direction, the series resistance effect has been observed. In general, the barrier height obtained from C-V data is greater than obtained from the I-V. This has been explained by introducing a spatial distribution of barrier heights (BHs) due to barrier height inhomogeneities that present at the PPy/p-Si interface. The C-f measurements of the structure have been performed at various biases and it has been seen that they have a good agreement between experimental and theoretical values. The interface state density Nss and relaxation time Ï of the structure have been determined from the C-f characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Polymer - Volume 46, Issue 24, 21 November 2005, Pages 10982-10988
Journal: Polymer - Volume 46, Issue 24, 21 November 2005, Pages 10982-10988
نویسندگان
Å. AydoÄan, M. SaÄlam, A. Türüt,