کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5190060 | 1381196 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Alicyclic photoresists for CO2-based next-generation microlithography: A tribute to James E. McGrath
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آلی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Addition polymerization of norbornene-based monomers has been pursued toward the fabrication of photoresists for next-generation microlithography, using condensed carbon dioxide as the developing solvent. Addition polymers containing a norbornyl backbone, for dry plasma etch resistance and high thermal stability, were synthesized to include fluorinated moieties and chemical amplification switching groups. These materials have been characterized and their lithographic properties evaluated. Solubility differences between exposed and non-exposed resist have been observed in these novel systems, which should provide the necessary contrast for high-resolution imaging. Lithographic imaging produced dense lines as small as 3 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Polymer - Volume 47, Issue 11, 17 May 2006, Pages 4012-4017
Journal: Polymer - Volume 47, Issue 11, 17 May 2006, Pages 4012-4017
نویسندگان
Mary Kate Boggiano, David Vellenga, Ruben Carbonell, Valerie Sheares Ashby, Joseph M. DeSimone,