کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5347418 | 1503584 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs](/preview/png/5347418.png)
چکیده انگلیسی
The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 383, 15 October 2016, Pages 19-27
Journal: Applied Surface Science - Volume 383, 15 October 2016, Pages 19-27
نویسندگان
A. Gocalinska, S. Rubini, E. Pelucchi,