Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

- Memory window and retention properties are improved employing HIBAS technique.
- The O/Si ratio and radiative recombination are changed by HIBAS.
- Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs.
- The mechanism of hydrogen ion beam alters the memory properties is investigated.