کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5348693 1503634 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
چکیده انگلیسی
For CH4/CD4, the D concentration in the film increased when the CD4/(CH4 + CD4) gas ratio increased, whereas the concentration of H decreased. For CH4/D2, the D concentration in the film increased with increasing D2 partial pressure, whereas the concentration of H decreased. From the PAS results, the S value increased with increasing CD4/(CH4 + CD4) gas ratio for CH4/CD4, whereas the S value did not change with any D2 partial pressure for CH4/D2. The hardness and the mass density of the films decreased when the CD4/(CH4 + CD4) gas ratio increased for CH4/CD4, whereas the hardness and the density did not change with any D2 partial pressure for CH4/D2. A correlation among the S value, the film hardness and the film density was observed, and the S value, the film hardness and the film density did not correlate to the D concentration in the film. These findings suggest that information about the vacancy-type defect of the hydrogenated amorphous carbon films is crucial for evaluation of their mechanical properties and density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 330, 1 March 2015, Pages 142-147
نویسندگان
, , , , ,