کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5348693 | 1503634 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
For CH4/CD4, the D concentration in the film increased when the CD4/(CH4Â +Â CD4) gas ratio increased, whereas the concentration of H decreased. For CH4/D2, the D concentration in the film increased with increasing D2 partial pressure, whereas the concentration of H decreased. From the PAS results, the S value increased with increasing CD4/(CH4Â +Â CD4) gas ratio for CH4/CD4, whereas the S value did not change with any D2 partial pressure for CH4/D2. The hardness and the mass density of the films decreased when the CD4/(CH4Â +Â CD4) gas ratio increased for CH4/CD4, whereas the hardness and the density did not change with any D2 partial pressure for CH4/D2. A correlation among the S value, the film hardness and the film density was observed, and the S value, the film hardness and the film density did not correlate to the D concentration in the film. These findings suggest that information about the vacancy-type defect of the hydrogenated amorphous carbon films is crucial for evaluation of their mechanical properties and density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 330, 1 March 2015, Pages 142-147
Journal: Applied Surface Science - Volume 330, 1 March 2015, Pages 142-147
نویسندگان
K. Ozeki, D. Sekiba, A. Uedono, K.K. Hirakuri, T. Masuzawa,