کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349757 | 1503646 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of the properties of In doped NiO films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
NiO and Indium doped (3, 5, 8 and 10 at%) NiO thin films were produced on glass substrates at 400 °C by airbrush spraying method using a solution of nickel nitrate hexahydrate. The effect of Indium (In) concentration on the structural, optical and transport properties of NiO thin films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectral transmittance and linear four-probe resistivity. From The X-ray diffraction pattern, it is observed that pure, 3% and 5 at% In doped NiO films have a cubic structure, but 8 and 10 at% doped films have an amorphous structure. Optical measurements show that the band gap energies of the films vary with indium concentrations. Moreover, It has been observed that the doping of NiO films with In increases the electrical resistivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 318, 1 November 2014, Pages 164-167
Journal: Applied Surface Science - Volume 318, 1 November 2014, Pages 164-167
نویسندگان
S. Kerli, U. Alver, H. YaykaÅlı,