Double Gaussian distribution of barrier height for FeCrNiC alloy Schottky contacts on p-Si substrates

- Quadripartite alloy FeCrNiC was used as rectifier contact on p-Si.
- I-V characteristics of FeCrNiC/p-Si device show a good rectifying behaviour.
- The electrical properties of FeCrNiC/p-Si device have been investigated in the temperature range of 80-320 K.
- Temperature dependence of the apparent BH shows double Gaussian distribution (DGD) character.
- Obtained results confirm the predictions of the multiple GD of the BH approach considering nanoscale spatial inhomogeneities at the interface of FeCrNiC/p-Si structure.