Resistivity and Hall voltage in gold thin films deposited on mica at room temperature

We report the thickness dependence of the resistivity measured at 4 K of gold films grown onto mica at room temperature (RT), for thickness ranging from 8 to 100 nm. This dependence was compared to the one obtained for a sample during its growth process at RT. Both behaviors are well represented by the Mayadas-Shatzkes theory. Using this model, we found comparable contributions of electron surface and electron grain boundary scattering to the resistivity at 4 K. Hall effect measurements were performed using a variable transverse magnetic field up to 4.5 T. Hall tangent and Hall resistance exhibit a linear dependence on the magnetic field. For this magnetic field range, the Hall mobility is always larger than the drift mobility. This result is explained through the presence of the above-mentioned scattering mechanisms acting on the galvanomagnetic coefficients. In addition, we report the temperature dependence of the resistivity between 4 and 70 K.