MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor

MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 360, Part A, 1 January 2016, Pages 157-163

G. Attolini, J.S. Ponraj, C. Frigeri, E. Buffagni, C. Ferrari, N. Musayeva, R. Jabbarov, M. Bosi,