Low-temperature growth of InxGa1−xN films by radio-frequency magnetron sputtering

▸ InxGa1−xN films were prepared by radio-frequency magnetron sputtering using an In-Ga alloy target. ▸ Grazing incidence X-ray diffraction peaks corresponding to wurtzite structure were observed. ▸ XPS and SIMS analysis indicates that the entire films have oxide phases. ▸ The optical transmittance spectra of the as-grown films show interference fringe patterns. ▸ Oxygen impurities formed amorphous oxide phases embedded in InxGa1−xN matrix.