FT IR spectroscopy of silicon oxide layers prepared with perchloric acid

► Formation of stoichiometric SiO2 layer with lowest density after chlorine oxidation ► KCN/HCN passivation contributes to formation of SiN, SiO and SiOH bonds at the expense of SiCl bonds. ► SiCN could not be identified due to overlapping of detected signal with absorption induced by CO2.