CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

► The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. ► Large hydrogen content results in decohesion of the films due to hydrogen effusion. ► Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. ► Grains of size between 20 and 100 μm in width and about 200 μm in long in scanning direction are obtained with these latter films.