کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5357280 1388215 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates
چکیده انگلیسی
The wetting and evaporation behaviors of molten Mg drops on pressureless-sintered SiC surfaces were studied in a flowing Ar atmosphere at 973-1173 K by an improved sessile drop method. The initial contact angles are between 83° and 76°, only mildly depending on temperature. The formation of a ridge at the triple junction as a result of reaction between molten Mg and the SiO2 film on the SiC surface pins the triple line and leads to a constant contact diameter mode during the entire evaporation process. Moreover, the diffusion coefficients of the Mg vapor at different temperatures were evaluated based on a simple model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 23, 15 September 2010, Pages 7043-7047
نویسندگان
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