کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5357280 | 1388215 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The wetting and evaporation behaviors of molten Mg drops on pressureless-sintered SiC surfaces were studied in a flowing Ar atmosphere at 973-1173 K by an improved sessile drop method. The initial contact angles are between 83° and 76°, only mildly depending on temperature. The formation of a ridge at the triple junction as a result of reaction between molten Mg and the SiO2 film on the SiC surface pins the triple line and leads to a constant contact diameter mode during the entire evaporation process. Moreover, the diffusion coefficients of the Mg vapor at different temperatures were evaluated based on a simple model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 23, 15 September 2010, Pages 7043-7047
Journal: Applied Surface Science - Volume 256, Issue 23, 15 September 2010, Pages 7043-7047
نویسندگان
Dan Zhang, Ping Shen, Laixin Shi, Qiaoli Lin, Qichuan Jiang,