Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS

► DLC/a-Si films were prepared by pulsed filtered cathodic arc. ► Carbon atoms impinging on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation which may potentially increase adhesive strength, hardness and wear resistance over the films. ► The formation of SiC was confirmed using Raman spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS).