کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5357744 | 1503639 | 2015 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation and optical properties of Ge films grown on Si(1Â 1Â 1) substrates using nanocontact epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Ge thin films were epitaxially grown on Si(1 1 1) substrates using ultrathin SiO2 film technique called nanocontact epitaxy. The key to this technique was the use of high density spherical nanodots (NDs) as seed crystals for the epitaxial growth of the Ge films. The seed crystal NDs were elastically strain-relaxed without misfit dislocations so that highly crystalline Ge thin films could be formed. The Ge films were â140 nm in thickness and were composed of island-shaped domains with flat Ge(1 1 1) surfaces. The domains had an average size of â1 μm and flat surfaces with root mean square of a surface roughness of â3 nm. The films had a photoluminescence peak at 0.8 eV, which meant that the films were highly crystalline.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 325, 15 January 2015, Pages 170-174
Journal: Applied Surface Science - Volume 325, 15 January 2015, Pages 170-174
نویسندگان
Kazuki Tanaka, Yoshiaki Nakamura, Shuto Yamasaka, Jun Kikkawa, Takenobu Sakai, Akira Sakai,