کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5358400 1503650 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
چکیده انگلیسی
Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AlN layers. Atomic force microscopy shows that an ultra-thin AlN layer does not substantially alter the surface morphology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 314, 30 September 2014, Pages 570-574
نویسندگان
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