Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1Â 0Â 0) systems

► P atoms as diffusion barriers led Ni-P film to form NiSi2 film at low temperature. ► Stable capping layer was formed with P, O, Ni and Si. ► Epitaxial NiSi2 layer with atomically flat interface was formed at 700 °C.