کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359862 | 1388253 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The remote plasma nitridation (RPN) of an HfO2 film using N2 and NH3 has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 °C show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO2 film nitrided with NH3-RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfOxNy gate dielectric nitrided with NH3-RPN have a smaller equivalent oxide thickness than that nitrided with N2-RPN in spite of its thicker interfacial layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 4, 1 December 2010, Pages 1347-1350
Journal: Applied Surface Science - Volume 257, Issue 4, 1 December 2010, Pages 1347-1350
نویسندگان
K.-S. Park, K.-H. Baek, D.P. Kim, J.-C. Woo, L.-M. Do, K.-S. No,