کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360877 | 1388266 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characteristics of hydrogenated In-doped ZnO thin films by pulsed DC magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and characteristics of hydrogenated In-doped ZnO thin films by pulsed DC magnetron sputtering Growth and characteristics of hydrogenated In-doped ZnO thin films by pulsed DC magnetron sputtering](/preview/png/5360877.png)
چکیده انگلیسی
We investigated the role of hydrogen impurities in highly oriented In-doped ZnO (IZO:H) films. The conductivity of ZnO:H films exhibit small variation despite the increase of hydrogen ratio. The small variation of the carrier concentration in IZO:H films can be explained by the reduction of the oxygen deficiency for the charge neutrality and the increase of Vzn-H bonding for partially charge compensation in the films. The additional mode at 573Â cmâ1 is interpreted as vacancy clusters. The discrepancy between the increase of vacancy clusters (573Â cmâ1) and small variation of carrier concentration is attributed to the different physical characteristics of the IZO:H films due to the hydrogen existence between bulk and surface. The measured FT-IR peak at 3500Â cmâ1 exhibits typical characteristic of O-H bonding.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 5, 15 December 2009, Pages 1589-1594
Journal: Applied Surface Science - Volume 256, Issue 5, 15 December 2009, Pages 1589-1594
نویسندگان
Young Ran Park, Juho Kim, Young Sung Kim,