کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5362376 1388284 2008 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching
چکیده انگلیسی
An analysis, based on angle-resolved X-ray photoelectron spectroscopy, multiple-internal-reflection infrared spectroscopy, and atomic force microscopy, of device-quality (1 0 0)silicon surfaces after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH2and SiH3 terminations, but contains sub-stoichiometric oxidized silicon. The analysis shows moreover the existence of a form of reduced silicon, not consistent with the currently accepted picture of the native HFaq-etched surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5781-5790
نویسندگان
, , , , , , ,