کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362991 | 1388295 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling the influence of the porosity of laser-ablated silicon films on their photoluminescence properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanostructured porous Si-based films produced by pulsed laser ablation (PLA) from a silicon target in residual helium gas can exhibit both size-dependent (1.6-3.2Â eV) and fixed photoluminescent (PL) bands (1.6 and 2.2Â eV) with their relative contributions depending on the film porosity. We study the influence of prolonged oxidation in ambient air on properties of the fixed PL bands, associated with oxidation phenomena, and their correlation with structural properties of the films. In addition, we propose a model describing the appearance of surface radiation states for oxidized films of various porosities. Our experiments and numerical simulations led to a conclusion that the 1.6Â eV PL is due to a mechanism involving a recombination through the interfacial layer between Si core and an upper oxide of nanocrystals. This mechanism gives the optimal porosity of 73% for the most efficient production of 1.6Â eV PL centers that is in excellent agreement with our experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 9, 28 February 2008, Pages 2771-2775
Journal: Applied Surface Science - Volume 254, Issue 9, 28 February 2008, Pages 2771-2775
نویسندگان
M. Meunier, J.-S. Bernier, J.-P. Sylvestre, A.V. Kabashin,