کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363378 | 1388300 | 2011 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Structural and optical properties of RF magnetron sputtered aluminum nitride films without external substrate heating Structural and optical properties of RF magnetron sputtered aluminum nitride films without external substrate heating](/preview/png/5363378.png)
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magnetron sputtering. A ceramic AlN target was used to sputter deposit AlN films without external substrate heating in Ar-N2 (1:1) ambient. The X-ray diffraction and high resolution transmission electron microscopy results revealed that the films were preferentially oriented along c-axis. Cross-sectional imaging revealed columnar growth perpendicular to the substrate. The secondary ion mass spectroscopy analysis confirmed that aluminum and nitrogen distribution was uniform within the thickness of the film. The optical band gap of 5.3Â eV was evaluated by UV-vis spectroscopy. Photo-luminescence broad band was observed in the range of 420-600Â nm with two maxima, centered at 433Â nm and 466Â nm wavelengths related to the energy states originated during the film growth. A structural property correlation has been carried out to explore the possible application of such important well oriented nano-structured two-dimensional semiconducting objects.
⺠Highly c-axis oriented AlN films without external substrate heating. ⺠Independence of preferred (0 0 2) orientation on sputtering pressure. ⺠Nano-crystallites with absence of any interface porosity and amorphous structure. ⺠Elemental composition uniformity of the film with depth. ⺠No extra control mechanism as required in reactive sputtering.
Journal: Applied Surface Science - Volume 257, Issue 22, 1 September 2011, Pages 9568-9573