کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363951 | 1388308 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reflectivity modification of polymethylmethacrylate by silicon ion implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50Â keV) Si+ beam at fluences in the range from 1013 to 1017Â cmâ2 was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si+-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 15, 30 May 2008, Pages 4820-4827
Journal: Applied Surface Science - Volume 254, Issue 15, 30 May 2008, Pages 4820-4827
نویسندگان
Georgi B. Hadjichristov, Victor Ivanov, Eric Faulques,