Modeling of CW laser diode irradiation of amorphous silicon films

▶ The CW laser irradiation of amorphous silicon thin films has been modeled. ▶ The optical properties of thin films are sensitive to film thickness due to the interference effects. ▶ Power densities to reach the melting, crystallization and ablation thresholds are determined. ▶ Heating the substrate during the laser process and low scan speeds allow to reduce significantly the threshold power densities.