کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364849 | 1388321 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates](/preview/png/5364849.png)
چکیده انگلیسی
Sapphire substrates were nano-patterned by inductive coupled plasma etching process. Nonpolar a-plane GaN films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. The anisotropic characteristic and the crystalline quality of the a-plane GaN films were studied through XRD rocking curves. The cross section and surface morphologies of the a-plane GaN films were studied using SEM and AFM measurements, respectively. The crystal quality and surface flatness of the nonpolar a-plane GaN were greatly improved through the usage of the nano-patterned r-plane sapphire substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 6, 1 January 2009, Pages 3664-3668
Journal: Applied Surface Science - Volume 255, Issue 6, 1 January 2009, Pages 3664-3668
نویسندگان
Haiyong Gao, Fawang Yan, Yang Zhang, Jinmin Li, Yiping Zeng, Junxi Wang,