Critical issues for interfaces to p-type SiC and GaN in power devices

► Interfaces to p-type SiC and GaN are fundamental for the performances of power devices. ► Improvement of p-type implanted SiC morphology (capping layer) results into better Ti/Al ohmic contacts formed on it. ► Annealing of p-type implanted region can impact the 4H-SiC MOSFETs mobility, which is limited by interface traps scattering. ► Complex evolution of microstructure and Schottky barrier height in annealed Ni/Au contacts to p-GaN. ► The reduced Schottky barrier upon annealing in oxidizing atmosphere explains the lower specific contact resistance.