کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365877 | 1388339 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation](/preview/png/5365877.png)
چکیده انگلیسی
Porous silicon (PS) was irradiated by three kinds of low-energy ions with different chemical activity, namely argon ions, nitrogen ions and oxygen ions. The chemical activity of ions has significant effect on the surface states and photoluminescence (PL) properties of PS, The photoluminescence quenching after argon ions and nitrogen ions irradiation is ascribed to the broken Si-Si bonds, while the PL recovery is attributed to the oxidation of Si-H back bonds. Oxygen ions irradiation leads to the formation of a SiOx layer with oxygen defects and PS shows different PL evolution than PS irradiated by argon ions and nitrogen ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 8, 15 February 2008, Pages 2479-2482
Journal: Applied Surface Science - Volume 254, Issue 8, 15 February 2008, Pages 2479-2482
نویسندگان
X.W. Du, Y. Jin, N.Q. Zhao, Y.S. Fu, S.A. Kulinich,