کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5366268 1388346 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microstructure, optical and electrical properties of nitrogen doped sp2-rich a-C thin films grown by facing-target magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Microstructure, optical and electrical properties of nitrogen doped sp2-rich a-C thin films grown by facing-target magnetron sputtering
چکیده انگلیسی

N atoms were incorporated into sp2-rich a-C networks using DC facing-target reactive sputtering at various N2 fraction (PN2) and their structure and opto-electrical properties were investigated systematically. As PN2 increases, the fraction of CN bonded carbons (or the N content) increases primarily at the expense of the CC bonded carbons and then reaches its saturated value at PN2 > 40%. The incorporated N preferentially forms different kinds of non-aromatic CN phase, leading to more localization of π electrons and the loss of the connectivity of nanographite fragments in the films, which is different from the case in N-doped sp3-rich a-CNx films. Hence, with increasing PN2, the a-C(:N) film converts from a semiconductor with a narrower optical band gap to an insulator-like material with a wider gap. Additionally, the variation of optical constants (n and k) and spin defects are related to the enhancement of the non-aromatic CN phase.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 23, 15 September 2009, Pages 9498-9503
نویسندگان
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