کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366268 | 1388346 | 2009 | 6 صفحه PDF | دانلود رایگان |

N atoms were incorporated into sp2-rich a-C networks using DC facing-target reactive sputtering at various N2 fraction (PN2) and their structure and opto-electrical properties were investigated systematically. As PN2 increases, the fraction of CN bonded carbons (or the N content) increases primarily at the expense of the CC bonded carbons and then reaches its saturated value at PN2Â >Â 40%. The incorporated N preferentially forms different kinds of non-aromatic CN phase, leading to more localization of Ï electrons and the loss of the connectivity of nanographite fragments in the films, which is different from the case in N-doped sp3-rich a-CNx films. Hence, with increasing PN2, the a-C(:N) film converts from a semiconductor with a narrower optical band gap to an insulator-like material with a wider gap. Additionally, the variation of optical constants (n and k) and spin defects are related to the enhancement of the non-aromatic CN phase.
Journal: Applied Surface Science - Volume 255, Issue 23, 15 September 2009, Pages 9498-9503