Influence of mesoporous substrate morphology on the structural, optical and electrical properties of RF sputtered ZnO layer deposited over porous silicon nanostructure

Morphological, optical and transport characteristics of the RF sputtered zinc oxide (ZnO) thin films over the mesoporous silicon (PS) substrates have been studied. Effect of substrate porosity on the grain growth and transport properties of ZnO has been analyzed. Physical and optical properties of ZnO-PS structures were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectroscopy. Our experimental results indicate that on changing porosity of the PS substrates, regularity of the spatial distribution of the ZnO nanocrystallites can be controlled. While the morphology and grain size of ZnO depended strongly on the morphology and pore size of the PS substrates, the rectifying factors of the metal semiconductor junction were found to be different by a factor of 3. The deposition of semiconducting oxides on such mesoporous substrates/templates offers the possibility to control their properties and amplify their sensing response.

► Morphology and grain size of ZnO crystallites depends strongly on the morphology/pore size of mesoporous Si substrates. ► Controllable morphological features of ZnO could be used to control the optical and transport properties. ► Such substrates can be also be used to amplify or change the sensing response of thin zinc oxide films.