کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5366823 1388356 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Kinetics of chemical vapor deposition of SiC from methyltrichlorosilane and hydrogen
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Kinetics of chemical vapor deposition of SiC from methyltrichlorosilane and hydrogen
چکیده انگلیسی

In this study, the dependence of the deposition rate on processing parameters, such as temperature, and partial pressure is studied by chemical vapor deposition from mixture of methyltrichlorosilane (CH3SiCl3, MTS) and hydrogen. The kinetics investigation is carried out in a tubular, hot-wall reactor coupled to a sensitive magnetic suspension microbalance. The results show that the active energy limited by surface reactions is 188 kJ/mol. In the case, the deposition rate is linear to the partial pressure of MTS and the square of partial pressure of hydrogen. SiCl2 and CH3 are proposed as the effective precursor for SiC. A reaction model was proposed concluding gas phase reactions and surface reactions. The theoretical relation between deposition rate and partial pressures of MTS and H2 was in a good accordance with experimental results.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 17, 15 June 2009, Pages 7495-7499
نویسندگان
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