کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367288 | 1388364 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of As enriched layer by steam oxidation of As+-implanted Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Segregation of implanted As during steam oxidation of Si wafers is shown to result in a highly enriched, thin layer of As at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase by as much as a factor of â¼2 depending on the depth distribution and fluence of the implanted As impurity. The thin As layer collected at the interface can be used in the design of very shallow junctions. This mechanism enables the formation of a narrow, degenerately doped layer of Si, which can be tailored to have a thickness of only few monolayers depending on the fluence of the implantation used.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 11, 15 March 2009, Pages 5857-5860
Journal: Applied Surface Science - Volume 255, Issue 11, 15 March 2009, Pages 5857-5860
نویسندگان
A. Baghizadeh, D. Agha-Aligol, D. Fathy, M. Lamehi-Rachti, M. Moradi,