کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367739 1388372 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate
چکیده انگلیسی

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6072-6075
نویسندگان
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