کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368061 | 1388383 | 2011 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition](/preview/png/5368061.png)
A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH4/H2/B(OCH3)3 gas mixture. A maximum growth rate of 0.65 mg cmâ2 hâ1 was obtained with CH4/H2/B(OCH3)3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH3)3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH4/H2/B(OCH3)3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 1020 cmâ3 with CH4/H2/B(OCH3)3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH4/H2/B(OCH3)3 ratio of 4/190/10 possessed the best phenol removal efficiency.
Research highlightsⶠOur work in this paper reported the preparation of boron-doped diamond (BDD) electrodes by a new chemical vapor deposition technique that was direct current plasma chemical vapor deposition (DC-PCVD). ⶠThis technique has been applied in deposition of thick diamond films but was merely investigated in preparing BDD electrodes. ⶠDue to the difficulty of sustaining stable plasma, available reports on the addition of other gases in deposition of doping diamond films by DC-PCVD are very few. ⶠTherefore, we attempted to control the boron dopant concentration and successfully prepared BDD electrodes by this method. ⶠThe effects of boron dopant concentration on the growth characteristic and electro-catalytic performance of BDD electrodes had been studied.
Journal: Applied Surface Science - Volume 257, Issue 8, 1 February 2011, Pages 3433-3439