کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5368224 1388388 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors
چکیده انگلیسی

We report on the fabrication and characterization of MgZnO/SiO2/n-Si structured photodetectors, for the visible-blind monitoring. The current-voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible rejection ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO2 layer will be discussed in terms of the band diagrams of the heterojunctions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 21, 15 August 2010, Pages 6153-6156
نویسندگان
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