کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368498 | 1388399 | 2010 | 4 صفحه PDF | دانلود رایگان |
The impact of the ZrO2/La2O3 film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO2/La2O3 high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO2 phases. This effect depends on the absolute thickness of ZrO2 within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm2, and interface trap densities in the range of 2-5 Ã 1012 eVâ1 cmâ2.
Journal: Applied Surface Science - Volume 256, Issue 16, 1 June 2010, Pages 5031-5034