کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5368551 1388400 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC
چکیده انگلیسی

Structural defects and their impact on the performance, lifetime and reliability of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al, Ga)N/GaN based high electron mobility transistor (HEMT) structures on 4H-SiC (0 0 0 1) substrates. This work points out how micropipes, dislocations and grain boundaries present in a 4H-SiC (0 0 0 1) wafer and subsequently overgrown with an (Al, Ga)N-GaN-HEMT layer sequence show up in X-ray topographic images and two-dimensional XRD maps. Using X-ray topography in transmission geometry, micropipes and other structural defects are localized non-destructively below structured metallization layers with a spatial resolution of a few tens of micrometers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 1, 31 October 2006, Pages 209-213
نویسندگان
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