H2 reactivity on the surfaces of In and Sn at 298 K

The reactivity of H2 gas with the In and Sn surfaces was quantitatively measured by a volumetric method at pressures ranging from 10−7 to 10−2 Pa at 298 K. Significant enhancement of H2 reactivity was observed when O2 or H2O preadsorbed on the surface of In and Sn before H2 exposure. The formation of the oxygen deficient SnO2−x and In2O3−z in the surface layers is proposed as a reason for such a facilitating the H2 dissociation and resulting in the enhancement of the H2 reactivity at 298 K.