کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369177 | 1388423 | 2009 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of CdTe films with in situ CdCl2 treatment grown by a simple vapor phase deposition technique Characterization of CdTe films with in situ CdCl2 treatment grown by a simple vapor phase deposition technique](/preview/png/5369177.png)
A unique vapor phase deposition (VPD) technique was designed and built to achieve in situ CdCl2 treatment of CdTe film. The substrate temperature was 400 °C, and the temperature of CdTe mixture with CdCl2 source was 500 °C. The structural and morphological properties of CdTe have been studied as a function of wt.% CdCl2 concentration by using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). XRD measurements show that the presence of CdCl2 vapor induces (1 1 1)-oriented growth in the CdTe film. SEM measurements have shown enhance growth of grains, in the presence of CdCl2. From AFM the roughness of the films showed a heavy dependence on CdCl2 concentration. In the presence of 4% CdCl2 concentration, the CdTe films roughness has a root mean square (rms) value of about 275 à . This value is about 831 à for the non-treated CdTe films.
Journal: Applied Surface Science - Volume 255, Issue 15, 15 May 2009, Pages 7012-7016