کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370097 | 1388470 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoconductive ultraviolet detectors based on ZnO films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360Â nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8Â mA, and a slow photoresponse with a rise time of 5Â min and a decay time of 7Â min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant Ï obtained from the curve fitting represents the time accumulation during the process. The neutralization of photogenerated holes by negatively charged oxygen ions plays a key role in the photoconductive characteristics of ZnO polycrystalline films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 4, 15 December 2006, Pages 2264-2267
Journal: Applied Surface Science - Volume 253, Issue 4, 15 December 2006, Pages 2264-2267
نویسندگان
X.G. Zheng, Q.Sh. Li, J.P. Zhao, D. Chen, B. Zhao, Y.J. Yang, L.Ch. Zhang,