کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370315 | 1388483 | 2006 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of post-copper CMP surfaces with scanning probe microscopy: Part 1: Surface leakage measurement with conductive atomic force microscopy Characterization of post-copper CMP surfaces with scanning probe microscopy: Part 1: Surface leakage measurement with conductive atomic force microscopy](/preview/png/5370315.png)
We demonstrate in this paper for the first time the use of conductive atomic force microscopy (AFM) to measure surface leakage between copper structures with varying line width and spacing in the micro and sub micrometer ranges. Conducting atomic force microscopy allows subsequent measurement of the topography as well as the electrical properties of surfaces. The feasibility and interest of these measurements will be shown by studying the impact of chemical mechanical polishing (CMP) of an electrical interface bearing different micrometric copper structures. As expected the polishing time has a crucial impact on the current determined between closely spaced copper structures. This paper will also deal with issues observed during the measurement.
Journal: Applied Surface Science - Volume 252, Issue 22, 15 September 2006, Pages 7760-7765