کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5370419 1388494 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
چکیده انگلیسی

A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. Accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4104-4109
نویسندگان
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