کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370426 | 1388494 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of photoluminescence properties of porous silicon by silica passivation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Porous silicon (PS) was passivated by silica film using a sol-gel method; the photoluminescence (PL) properties were significantly improved; namely, PL intensity and stability increased and PL peak shifted to shorter wavelength. Scanning electron microscope (SEM) and Fourier transformed infrared spectroscope (FTIR) results indicated that silica passivation produced a compact film on the PS surface and modified the surface state of PS. The number of stable surface bonds (HSiO3, HSiSiO2 and H2SiO2) increased due to the oxidation of SiH back-bonds during the gelation process, and thus the PL intensity and stability were improved. Moreover, the blue-shift of PL peak was determined due to the increase in the ratio of SiO/SiH.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4161-4166
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4161-4166
نویسندگان
Xi-Wen Du, Ying-Wei Lu, Jun-Peng Liu, Jing Sun,