کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370429 | 1388494 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates](/preview/png/5370429.png)
چکیده انگلیسی
The spinodal-like decomposition of InxGa1âxP epitaxial layer prepared by low-pressure metallorganic vapour phase epitaxy was studied by means of photoluminescence and transmission electron microscopy. Epitaxial layers were grown on GaP substrates at Tg = 740 °C and reactor pressure of 20 mbar. We show that presence of spinodal-like decomposition occur at samples with InP mole fraction higher as x = 0.2 and V/III ratio of 75. The low-temperature photoluminescence spectra shows that in partially decomposed samples a characteristic broad band occurred close to 1.985 eV. An increase in the V/III ratio up to a value of 350 suppressed the decomposition, and PL signal with only one narrow transition was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4178-4184
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4178-4184
نویسندگان
J. Novák, S. Hasenöhrl, I. Vávra, M. KuÄera,