کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540269 | 871299 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A fully integrated 23.2 dBm P1 dB CMOS power amplifier for the IEEE 802.11a with 29% PAE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A fully integrated 23.2 dBm P1 dB CMOS power amplifier for the IEEE 802.11a with 29% PAE A fully integrated 23.2 dBm P1 dB CMOS power amplifier for the IEEE 802.11a with 29% PAE](/preview/png/540269.png)
چکیده انگلیسی
A two-stage fully integrated power amplifier (PA) for the 802.11a standard is presented. The PA has been fabricated using UMC 0.18 μm CMOS technology. Measurement results show a power gain of 21.1 dB, a P1 dB of 23.2 dBm and a PSAT of 26.8 dBm. The PAE is 29% and it is kept high by means of several integrated inductors. These inductors present low-DC resistance and high Q characteristics. The inductors must include extra design considerations in order to withstand the high-current levels flowing through them, so that they have been called power inductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 42, Issue 1, January 2009, Pages 77–82
Journal: Integration, the VLSI Journal - Volume 42, Issue 1, January 2009, Pages 77–82
نویسندگان
Héctor Solar, Roc Berenguer, Joaquín de No, Iñaki Gurutzeaga, Unai Alvarado, Jon Legarda,