کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541015 871370 2014 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A new extension method of retention time for memory cell on dynamic random access memory
ترجمه فارسی عنوان
یک روش افزودن جدید زمان نگهداری برای سلول حافظه در حافظه دسترسی پویا
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی

Demands have been placed on dynamic random access memory (DRAM) to not only increase memory capacity and data transfer speed but also to reduce operating and standby currents. When a system uses DRAM, the restricted data retention time necessitates a refresh operation because each bit of the DRAM is stored as an amount of electrical charge in a storage capacitor. Power consumption for the refresh operation increases in proportion to memory capacity. A new method is proposed to reduce the refresh power consumption dynamically, when full memory capacity is not required, by effectively extending the memory cell retention time. Conversion from 1 cell/bit to 2N cells/bit reduces the variation of retention times among memory cells. The proposed method reduces the frequency of disturbance and power consumption by two orders of magnitude. Furthermore, the conversion itself can be realized very simply from the structure of the DRAM array circuit, while maintaining all conventional functions and operations in the full array access mode.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 47, Issue 3, June 2014, Pages 329–338
نویسندگان
, ,