کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541457 871471 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NORA based TDC in 90 nm CMOS
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
NORA based TDC in 90 nm CMOS
چکیده انگلیسی


• A time to digital converter with very high linearity.
• Based on dynamic logic to improve resolution.
• Ring oscillator based topology to increase dynamic range.
• Test chip fabricated in 90 nm CMOS technology.
• Experimental 25 ps resolution measured.

This paper investigates the idea to construct Time-to-Digital Converter (TDC) circuits based on dynamic precharged NORA delay elements. A self-charging technique is proposed in order to accommodate the dynamic delay elements in a ring-oscillator like structure. The employ of dynamic logic allows to reduce the TDC resolution with respect to previous TDCs based on standard CMOS logic. The ring-oscillator like topology imparts a very large dynamic range to the proposed circuit. In the paper a TDC, based on a Pseudo-differential topology, is presented, that is robust against PVT and mismatch variations. The TDC is fabricated in 90 nm CMOS technology, and presents a resolution of 25 ps. Experimental measurements confirm the effectiveness of the idea and show that the proposed TDCs exhibit low INL and a large dynamic-range when compared with state-of-the art circuits.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 6, June 2013, Pages 489–495
نویسندگان
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