کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541954 871503 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling
چکیده انگلیسی

The dummy test structures based de-embedding techniques allow one to quickly subtract out part of the parasitic contributions from the microwave transistor measurements without the need of explicit determination of the associated circuit model. But this means that the problem of determining the complex network representing the dummy structures is only by-passed rather than solved. Consequently, this paper is aimed at extracting accurate lumped element models for silicon “open” and “short” structures in order to extend the nonlinear microwave modeling of on-wafer FinFETs at the calibration plane corresponding to the probe tips without need of any shift of the reference plane.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 41, Issue 9, September 2010, Pages 574–578
نویسندگان
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