A comprehensive analytical study of an undoped symmetrical double-gate MOSFET after considering quantum confinement parameter

This paper presents analytical models of threshold voltage, carrier concentration and drain current for undoped symmetrical double-gate (SDG) MOS devices. The analytical models are derived after solving the Poisson's equation under Gradual Channel Approximation (GCA). Quantum mechanical effect in ultrathin silicon film is studied by introducing quantum confinement parameter and quantum corrected potential in the Poisson's equation instead of solving complex Schrödinger–Poisson's equation. The confinement parameter, which depends on film thickness, work function and gate bias decreases with film thickness. Quantum corrected potential attains its maximum value near the interface and minimum value at the centre of the silicon film. The mobile carrier density and surface potential are reduced due to quantum confinement effect. The simulation result of the threshold voltage shows excellent agreement with quantum numerical results.