Keywords: تغییر ولتاژ آستانه; Carbon nanotubes; Gas sensors; Fabrication; Gate coupling; Threshold voltage shift;
مقالات ISI تغییر ولتاژ آستانه (ترجمه نشده)
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Keywords: تغییر ولتاژ آستانه; Carbon nanotube network transistor; Gamma ray; Threshold voltage shift;
Keywords: تغییر ولتاژ آستانه; OFET; Channel length; Threshold voltage shift; Hole and electron trapping effect;
Keywords: تغییر ولتاژ آستانه; a-IGZO TFTs; LCD reliability test; Sand mura; Threshold voltage shift; Positive; Thermal gate bias stress
High performance p-type chlorinated-benzothiadiazole-based polymer electrolyte gated organic field-effect transistors
Keywords: تغییر ولتاژ آستانه; Organic field-effect transistors; Conjugated polymers; Benzothiadiazole; Solid-state electrolyte; Threshold voltage shift;
Intrinsic charge carrier mobility in single-crystal OFET by “fast trapping vs. slow detrapping” model
Keywords: تغییر ولتاژ آستانه; Single-crystal organic field-effect transistor (OFET); Intrinsic charge carrier mobility; Gate stress; Hole traps; Threshold voltage shift; Mobility anisotropy;
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics
Keywords: تغییر ولتاژ آستانه; HfO2; Stacked dielectrics; Transfer characteristics; Threshold voltage shift; Negative and positive gate bias stress;
Robust low power DC-type shift register circuit capable of compensating threshold voltage shift of oxide TFTs
Keywords: تغییر ولتاژ آستانه; Low power; Oxide TFT; DC-type; Shift register; Depletion mode; Threshold voltage shift;
Processes in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift
Keywords: تغییر ولتاژ آستانه; Fixed traps; Radiation dose; Switching traps; Threshold voltage shift; Annealing;
Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
Keywords: تغییر ولتاژ آستانه; InP-based electron mobility transistor; Threshold voltage shift; Cutoff frequency, ft; Maximum oscillation frequency, fmax
Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2
Keywords: تغییر ولتاژ آستانه; a-Si TFT; Back channel treatment; Off current; Threshold voltage shift
Flexible low-voltage organic phototransistors based on air-stable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)
Keywords: تغییر ولتاژ آستانه; Dinaphthothienothiophene (DNTT); Organic phototransistor; Optical characterization; Optical sensor; Threshold voltage shift; Dielectric interface trapping
Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50Â Gy with 60Co
Keywords: تغییر ولتاژ آستانه; Mosfet; Radfet; Threshold voltage shift; Sensitivity; Fading;
The effect of interface trapped charge on threshold voltage shift estimation for gamma irradiated MOS device
Keywords: تغییر ولتاژ آستانه; Interface trap charge; Threshold voltage shift; MOS device; TID
Stability of low voltage n-type organic field effect transistors
Keywords: تغییر ولتاژ آستانه; C60; Bias stress; n-Type OFETs stability; Threshold voltage shift; Trapping/De-trapping of charges;
Ameliorating the bias stress stability of n-type OFETs
Keywords: تغییر ولتاژ آستانه; Bias stress; Threshold voltage shift; Charge trapping in semiconductor or dielectric layer; Grain boundaries; Trapping/De-trapping of charges; Low voltage OFETs;
Real-time NO2 detection at ppb level with ZnO field-effect transistors
Keywords: تغییر ولتاژ آستانه; NO2 sensors; Field-effect transistor; Electron trapping; Threshold voltage shift; Stretched-exponential; Real-time sensor; Dynamic read out
Quasi-static capacitance–voltage characteristics of pentacene-based metal–oxide–semiconductor structures
Keywords: تغییر ولتاژ آستانه; Organic thin-film transistors; Metal–oxide–semiconductor capacitor; Quasi-static capacitance–voltage characteristics; Hysteresis; Threshold voltage shift; Modeling; Pspice
Organic field-effect transistors with molecularly doped polymer gate buffer layer
Keywords: تغییر ولتاژ آستانه; Organic field-effect transistor; Molecularly doped gate buffer layer; Hole doping; Electron trap; Threshold voltage shift
A comprehensive study of various etch processes for the removal of silicide-block-film in submicron CMOS technologies
Keywords: تغییر ولتاژ آستانه; Silicide-block-film; Dry etch; Wet etch; Threshold voltage shift
The role of the dielectric interface in organic transistors: A combined device and photoemission study
Keywords: تغییر ولتاژ آستانه; Organic field effect transistor; Ultra-violet photoemission spectroscopy; Interface dipole; Energy level alignment; Threshold voltage shift
A comprehensive analytical study of an undoped symmetrical double-gate MOSFET after considering quantum confinement parameter
Keywords: تغییر ولتاژ آستانه; Symmetrical double-gate MOSFET; Poisson's equation; Quantum confinement effect; Gradual channel approximation; Threshold voltage shift; Mobile charge density
Control of threshold voltage of organic field-effect transistors by space charge polarization
Keywords: تغییر ولتاژ آستانه; Organic field-effect transistors (OFETs); Threshold voltage shift; Polarization; Gate dielectric
Performance improvement of flash memory using AlN as charge-trapping Layer
Keywords: تغییر ولتاژ آستانه; High-k dielectric; Threshold voltage shift; AlN; Pulse
Direct protein detection with a nano-interdigitated array gate MOSFET
Keywords: تغییر ولتاژ آستانه; Nano-interdigitated array gate MOSFET; Gate oxide capacitance; Threshold voltage shift; Protein binding reaction; Ixodes ricinus immunosuppressor
Drain bias dependent bias temperature stress instability in a-Si:H TFT
Keywords: تغییر ولتاژ آستانه; a-Si:H Thin film transistor; Bias temperature stress; Threshold voltage shift
Instability of threshold voltage under constant bias stress in pentacene thin film transistors employing polyvinylphenol gate dielectric
Keywords: تغییر ولتاژ آستانه; Organic semiconductors; Stress; Threshold voltage shift; Interfaces; Electronic devices
Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process
Keywords: تغییر ولتاژ آستانه; Plasma charging damage; Threshold voltage shift; Gate-induced-drain-leakage current